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| Semiconductor DP030E PNP Silicon Transistor Features * Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.15V Typ. @IC /IB =-100mA/-10mA) * Suitable for low voltage large current drivers * Complementary pair with DN030E * Switching Application Ordering Information Type NO. DP030E Marking P01 Package Code SOT-523F Outline Dimensions unit : mm 1.600.1 0.880.1 1.600.1 1.000.1 1 3 2 0.25~0.30 +0.1 -0.05 PIN Connections 1. Base 2. Emitter 3. Collector 0~0.1 KST-4010--000 1.110.05 0.68 1 DP030E Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25 C) Symbol VCBO VCEO VEBO IC PC Tj T stg Ratings -15 -12 -5 -300 150 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage (Ta=25 C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) fT C ob Test Condition IC=-50A, I E =0 IC=-1mA, IB=0 IE =-50A, IC =0 VCB=-12V, I E =0 VEB =-5V, IC =0 VCE=-1V, IC =-100mA VCE=-1V, IC =-300mA IC=-100mA, IB =-10mA IC=-300mA, IB =-30mA IC=-100mA, IB =-10mA IC=-300mA, IB =-30mA VCE=-5V, IC =-10mA VCB=-10V, I E =0, f=1MHz Min. -15 -12 -5 200 70 - Typ. 350 4 Max. -0.1 -0.1 450 -0.2 -0.5 -1.2 -1.7 - Unit V V V A A V V V V MHz PF Base-Emitter saturation voltage Transition frequency Collector output capacitance KST-4010--000 2 DP030E Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC-VBE 1V Fig. 3 hFE - IC Fig. 4 IC - VCE Eohhfie Fig. 5 VCE(sat) - IC KST-4010--000 3 |
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